News

Tech Brief Demonstrates How New Mixer MMICs Achieve Exceptional Linearity Using GaN

Posted on Tuesday, April 25, 2017
Tech Brief Demonstrates How New Mixer MMICs Achieve Exceptional Linearity Using GaN

Custom MMIC is proud to announce a new technical brief illuminating our progress with reaching incredible limits of linearity with passive MMIC mixers using GaN Technology.

Over the past year, mixer experts at Custom MMIC have been exploring the use of gallium nitride (GaN) processes as the basis for extremely linear RF mixers. Deducing that the high linearity performance of GaN power amplifiers may cross-over to other critical microwave components, Custom MMIC engineers have gone through several iterations of GaN mixer technologies and typologies with several of our key foundry partners.

Ultimately, the fruits of their efforts have led to passive GaN mixer designs that surpass all gallium arsenide (GaAs) passive mixer designs in terms of the ratio of input third-order intercept point (IIP3) to local oscillator (LO) drive -- a figure-of-merit Custom MMIC is coining as Linear Efficiency. From S-band to K-band (2 GHz to 19 GHz) these new passive GaN mixers are demonstrating IIP3 figures well above 30 dBm, LO drive levels around 20 dBm, and linear efficiencies above 10 dB.

Custom MMIC

300 Apollo Drive
Chelmsford, MA 01824
Phone: 978-467-4290
Fax: 978-467-4294

Terms and Conditions

©2006-2017 Custom MMIC
All rights reserved.

Get our News:

Privacy Policy
GET OUR NEWS
Raytheon Supplier Excellence Award 2016,2017
Custom MMIC Awarded Gold Supplier rating by BAE Systems
Custom MMIC

300 Apollo Drive
Chelmsford, MA 01824
Phone: 978-467-4290
Fax: 978-467-4294

Terms and Conditions
Privacy Policy

©2006-2019 Custom MMIC
All rights reserved.

X
We use cookies to enhance your user experience. By continuing to browse this site, you are giving your consent for cookies to be used. For more information, please refer to our Privacy Policy.