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Rounding up our Best GaN RF Power Amplifier MMICs

Posted on Wednesday, June 20, 2018
Rounding up our Best GaN RF Power Amplifier MMICs

The power of GaN MMIC technology is strongest when applied to RF power amplifier MMICs. Here we quickly review some of our power amplifier MMIC successes with GaN.

The CMD262 is a 5 W GaN MMIC power amplifier die ready for Ka-band systems where high power and high linearity are a must. This MMIC amplifier delivers greater than 26 dB gain with a corresponding output 1 dB compression point of +37.5 dBm and a saturated output power of +38.5 dBm at 30% power added efficiency. It is a 50-ohm matched design eliminating the need for external DC blocks and RF port matching.

The CMD216 is a 5.6 W GaN MMIC power amplifier ideally suited for Ku band communications where high power and high linearity are once again crucial. This GaN power amplifier MMIC chip delivers greater than 16 dB of gain with a corresponding output 1 dB compression point of +37 dBm and a saturated output power of +38 dBm at 32% power added efficiency. The CMD216 amp is a 50-ohm matched design also offers full passivation.

The CMD184 is the best rf and microwave power amplifier MMIC chip in its category and is one of our best selling and most popular devices. It is a 4.5 W wideband GaN MMIC power amplifier die which operates from 0.5 to 20 GHz. It delivers greater than 13 dB of gain with a corresponding output 1 dB compression point of +34.5 dBm and a saturated output power of +36.5 dBm. The CMD184 power amplifier MMIC is a 50-ohm matched IC design, eliminating the need for RF port matching.

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300 Apollo Drive
Chelmsford, MA 01824
Phone: 978-467-4290
Fax: 978-467-4294

Terms and Conditions
Privacy Policy

©2006-2018 Custom MMIC
All rights reserved.