We are proud to announce a new technical brief illuminating our progress in eliminating complex bias sequencers and negative voltage supply.
Our expert engineers have been exploring the use of enhancement mode pseudomorphic high-electron-mobility-transistors (E-pHEMTs) in monolithic microwave integrated circuits (MMICs). This is a promising technique, for it directly addresses a well-known design challenge. Specifically, that of sequencing in amplifier biasing.
The savings generated by removing the sequencer can be enormous. The use of E-pHEMT devices by designers of power amplifiers (PAs) and low noise amplifiers (LNAs) is in its infancy, as such devices have only recently been made available from a number of semiconductor manufacturers. However, Custom MMIC has been a pioneer in this area and currently offers dozens of standard, off-the-shelf PA and LNA components built with E-PHEMT technology. Not only can E-pHEMT amplifiers reduce cost and complexity, they can also improve performance. By definition, this is a win-win situation.