News

28 - 32 GHz GaN Power Amplifier Offers High Power and High Linearity

Posted on Tuesday, September 02, 2014
28 - 32 GHz GaN Power Amplifier Offers High Power and High Linearity

The CMD217 is a new 28 to 32 GHz GaN power amplifier in die form which features greater than 20 dB of gain across its operating frequency range, with a corresponding output 1 dB compression point of +36.7 dBm and saturated output power of +39.3 dBm (8.5 W). Power added efficiency for the CMD217 is 28% to 35% across the band.

The CMD217 is a fully matched 50 ohm design and only requires external bypass capacitors to complete the bias circuitry. The die is passivated for increased reliability and moisture protection. Ideal applications for the CMD217 include Ka-band communication systems, where high power and high linearity are required.

To download the full datasheet for the CMD217 Power Amplifier, visit our Custom MMIC Product Library.

Custom MMIC

300 Apollo Drive
Chelmsford, MA 01824
Phone: 978-467-4290
Fax: 978-467-4294

Terms and Conditions

©2006-2017 Custom MMIC
All rights reserved.

Get our News:

GET OUR NEWS


Raytheon Supplier Excellence Award 2016,2017
Custom MMIC

300 Apollo Drive
Chelmsford, MA 01824
Phone: 978-467-4290
Fax: 978-467-4294

Terms and Conditions

©2006-2018 Custom MMIC
All rights reserved.