LNA MMIC Offers a Noise Figure of 1.5 dB from 6 to 18 GHz in DIE oz SMT Package

    The CMD157 (die) and CMD157P3 (packaged) are GaAs MMIC low-noise amplifiers (LNAs) for applications from 6 to 18 GHz. These broadband devices each boast an impressively low noise figure of 1.5 dB, deliver greater than 25 dB of flat gain, and have a corresponding output 1 dB compression point of +10 dBm.

    Both the CMD157 and the CMD157P3 are 50 Ohm matched designs, thus eliminating the need for external DC blocks and RF port matching. The CMD157 is suitable for chip-and-wire applications, whereas the CMD157P3 is housed in a leadless RoHS compliant 3x3 mm plastic surface mount package. The amplifiers are biased with a single positive voltage of +3.0 V @ 52 mA. RF power can be applied at any time.

    These LNAs are much smaller, lower-cost alternatives to hybrid amplifiers in this frequency range. Ideally suited for broadband EW and communication systems, where small size and low power consumption are needed, the CMD157 and the CMD157P3 can also be used in low noise downconverters, microwave radio receiver systems, and radar receivers.

    Ka-Band LNA MMIC Offers 1.7 dB Noise Figure and Low Power Dissipation for SatCom

    The CMD162 is a GaAs MMIC low-noise amplifier (LNA) chip for applications from 26 to 34 GHz. Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.7 dB with a small-signal gain of 22 dB and an output 1 dB compression point of +7 dB. This amplifier delivers high performance with high efficiency, reducing typical industry DC power dissipation for a device in this frequency band from approximately 340 mW down to 50 mW.

    The CMD162 also offers subsystem and device designers a key cost reduction attribute. Implementation is simplified since the device only requires positive drain and gate voltages of +2 V, thereby eliminating the negative voltages and sequencer circuits commonly associated with LNAs in this frequency range. The CMD162 can be biased with a drain voltage ranging from +1 to +4 V and a gate voltage ranging from 0 to +3 V.

    The amplifier die measures 2.3 x 1.3 mm, includes gold backside metallization, and has full nitride passivation for increased reliability and moisture protection. It can handle input signal levels to +20 dBm. The GaAs MMIC amplifier has typical input return loss of 18 dB and typical output return loss of 20 dB, both at 30 GHz. It is a much smaller, lower-cost alternative to hybrid LNAs for this frequency range, and is uniquely suited for both narrowband and broadband applications requiring small size and low current consumption, including phased-array radar and point-to-point microwave radio systems.