The CMD158C4 is a new 6 to 16 GHz driver amplifier which delivers 21 dB of gain across its bandwidth, while providing +21 dBm of saturated output power at a PAE of 24%. The CM158C4 operates from a single positive supply voltage of +5.0 V @ 95 mA.
The amplifier is housed in a Pb-free, RoHs-compliant, ceramic 4x4 mm QFN surface-mount package. No external components are required for operation except the usual bypass capacitors on the VDD line.
Ideal applications for the CMD158C4 include point-to-point and point-to-multipoint radios, VSAT, LO driver amplifiers, and military applications.
The CMD217 is a new 28 to 32 GHz GaN power amplifier in die form which features greater than 20 dB of gain across its operating frequency range, with a corresponding output 1 dB compression point of +36.7 dBm and saturated output power of +39.3 dBm (8.5 W). Power added efficiency for the CMD217 is 28% to 35% across the band.
The CMD217 is a fully matched 50 ohm design and only requires external bypass capacitors to complete the bias circuitry. The die is passivated for increased reliability and moisture protection. Ideal applications for the CMD217 include Ka-band communication systems, where high power and high linearity are required.
The CMD216 is a new 14-18 GHz GaN power amplifier in die form which delivers 16 dB of flat gain across the entire 14 to 18 GHz bandwidth, an output 1 dB compression point of +37 dBm, and a saturated output power of +38 dBm. The CMD216 requires a bias of Vdd = 28 V, 550 mA, and Vgg = -3.4 V. Additionally, the amplifier boasts a power added efficiency of 32% or greater.
The CMD216 is a fully matched 50 ohm matched design and only requires external bypass capacitors to complete the bias circuitry. The die is passivated for increased reliability and moisture protection. The CMD216 is ideally suited for Ku-band communications systems.
The CMD207 is a new 20-40 GHz MMIC driver amplifier in die form with an all positive bias scheme which delivers 25 to 30 dB of gain, has an output 1 dB compression point of +18.5 dBm, a saturated output power of +21 dBm, and a noise figure of 5 to 6 dB across the entire 20 to 40 GHz bandwidth. The amplifier utilizes an all-positive bias scheme of 4.0 V, 270 mA on the drain, and 3 V, 3 mA on the gate, thereby eliminating the need for a negative voltage and costly bias sequencing circuitry.
The CMD207 is a matched 50 Ohm design and does not require any external components except for bypass capacitors. The die is fully passivated for increased reliability and moisture protection. Ideal applications for the CMD207 are point-to-point and point-to-multipoint radios, VSAT, and military and space.
The CMD206 is a new DC-50 GHz distributed low noise amplifier in die form which features DC to 50 GHz operation with a noise figure of less than 3.5 dB, a gain of greater than 11 dB, and an output 1 dB compression point of +12 dBm at 30 GHz. The amplifier requires an all-positive bias of only 4 V @ 32 mA (drain), 3 V (gate).
An external drain bias network and input blocking capacitor are required for proper operation. The die offers full passivation for increased reliability and moisture protection.
Applications for the CMD206 include microwave radio and VSAT, telecom infrastructure, test instrumentation, military and space, and fiber optics.