Custom MMIC announces their attendance at European Microwave Week 2017 in Nuremberg, Germany, October 8th through 13th. Custom MMIC representatives will be excited to meet and discuss the latest developments in RF and microwave GaAs and GaN MMICs, including ultra-wideband amplifiers, linear mixers, low noise amplifiers (LNAs), low-phase noise amplifiers (LPNAs), switches, and more at stand 113.
Nicholas Novaris, a lead engineer with Custom MMIC, will also be presenting a paper titled, “Understanding the Phenomenon of High Power Pulse Recovery in GaN LNAs”. The paper explores and details the high power pulse recovery behavior of commercially available and overdriven gallium nitride (GaN) low noise amplifiers (LNAs). This topic has become pertinent as GaN LNAs, with comparable noise figures to commonly installed gallium arsenide (GaAs) LNAs, are capable of withstanding much higher input power levels than GaAs, and have teh added benfit of not requiring additional and performance degrading limiter circuitry.
This input power handling capability is attractive for defense applications, as military and aerospace receivers are often subject to jamming signals and may be in close proximity to high power transmitters. It has been discovered however, that even though GaN LNAs can withstand these high power, interfering signals, when the interference signal is quickly removed, residual distortion occurs until the LNA recovers. So advancing on past research, Custom MMIC engineers subjected GaN LNAs to a series of non-coherent jamming signals with varying duration and intensity. It was discovered that the recovery time exhibited a radical relationship to the input power. Moreover, the input action also significantly impacted the recovery time.
Nicholas Novaris will be sharing the results of this study Wednesday, October 11th, at 2:10 PM in the Kiew room, as part of the EuMC28 sessions on amplifiers and receivers. To get a copy of Nick's paper after the show, send a request to our support team.