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Low Noise GaN Amplifier Survives High Incident Power

Posted on Thursday, December 04, 2014
Low Noise GaN Amplifier Survives High Incident Power

The CMD218 offers a gain of 22 dB, output of 1 dB, compression point of +19.5 dBm, and noise figure of less than 1.25 dB across the 5 to 9 GHz frequency range. In addition, without an input limiter, the CMD218 can survive high incident power levels up to 5 W with no degradation in performance.   The CMD218 is a 50 ohm matched design, thus eliminating the need for external DC blocks and RF port matching. In terms of biasing, the CMD218 can operate from a supply voltage of 5 V to 28 V, and typically draws 100 mA of quiescent current. A negative gate voltage is required for proper operation.   The LNA is ideally suited for microwave radios and C- and X-band applications where small size and low power consumption are needed. Applications include point-to-point and point-to-multipoint radios, military and space, and test instrumentation.

Download the full datasheet on the CMD218 >>

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300 Apollo Drive
Chelmsford, MA 01824
Phone: 978-467-4290
Fax: 978-467-4294

Terms and Conditions

©2006-2018 Custom MMIC
All rights reserved.