News

Low Noise GaN Amplifier Survives High Incident Power

Posted on Thursday, December 04, 2014
Low Noise GaN Amplifier Survives High Incident Power

The CMD218 offers a gain of 22 dB, output of 1 dB, compression point of +19.5 dBm, and noise figure of less than 1.25 dB across the 5 to 9 GHz frequency range. In addition, without an input limiter, the CMD218 can survive high incident power levels up to 5 W with no degradation in performance.   The CMD218 is a 50 ohm matched design, thus eliminating the need for external DC blocks and RF port matching. In terms of biasing, the CMD218 can operate from a supply voltage of 5 V to 28 V, and typically draws 100 mA of quiescent current. A negative gate voltage is required for proper operation.   The LNA is ideally suited for microwave radios and C- and X-band applications where small size and low power consumption are needed. Applications include point-to-point and point-to-multipoint radios, military and space, and test instrumentation.

Download the full datasheet on the CMD218 >>

Custom MMIC

300 Apollo Drive
Chelmsford, MA 01824
Phone: 978-467-4290
Fax: 978-467-4294

Terms and Conditions

©2006-2017 Custom MMIC
All rights reserved.

Get our News:

Privacy Policy
GET OUR NEWS
Raytheon Supplier Excellence Award 2016,2017
Custom MMIC Awarded Gold Supplier rating by BAE Systems
Custom MMIC

300 Apollo Drive
Chelmsford, MA 01824
Phone: 978-467-4290
Fax: 978-467-4294

Terms and Conditions
Privacy Policy

©2006-2019 Custom MMIC
All rights reserved.

X
We use cookies to enhance your user experience. By continuing to browse this site, you are giving your consent for cookies to be used. For more information, please refer to our Privacy Policy.