We are pleased to announce the addition of the CMD241P4, a packaged version of our popular CMD241 ultra-wideband GaAs MMIC distributed low noise amplifier. The wideband operation, low noise figure, low current consumption, excellent return loss, and compact size of this distributed amplifier device make it ideal in use in L-, S-, C-, X-, Ku-, and K-band wideband radar, broadband microwave/millimeter wave communications, SATCOM, and test and measurement instrumentation applications.
The CMD241P4 exhibits gain greater than 13 dB with a low noise figure of 2.3 dB. Both the gain and noise figure of this distributed amplifier are both extremely stable over temperature, from -55 °C to +85 °C. The CMD241P4 demonstrates a 1 dB compression point beyond +21 dBm at 11 GHz and an output IP3 of +28 dBm, operating off a positive 3 to 8 volt supply, with an extremely low current draw of only 74 mA. The input return loss is typically 13 dB, and output return loss of 15 dB.
The distributed amplifier comes in a Pb-free RoHs compliant 4x4 QFN plastic package. Also incorporated into the design of this MMIC is a 50 Ohm matched impedance at the input and output ports, which removes the need for both external DC blocks and RF matching.
We have announced a new edition to our growing line of high performance MMIC doublers, the CMD226N3 broadband frequency doubler. The doubler covers an input frequency of 7 GHz to 11 GHz input frequency (C-, X, input; Ku- and K-band output). This doubler’s low conversion loss and excellent Fo isolation make it ideal for use in military radar, SMDS, SATCOM, VSAT, and LO chains for point-to-point microwave/millimeter-wave radio in cellular backhaul applications.
The GaAs MMIC >MD226N3 is a x2 passive frequency multiplier that offers broadband performance and is housed in a QFN-style package. With a drive level of +15 dBm, this frequency doubler offers 9.0 dBm of conversion loss at 18 GHz and Fo Isolation in reference to an input level of 44 dB. The 3Fo and 4Fo isolation are at least 48 dBc and 50 dBc, respectively.
Extremely temperature stable, the conversion gain varies less than 2 dB from nominal across the entire frequency band of operation, and is also very stable under varying drive conditions. The CMD226N3's passive design exhibits excellent phase noise performance, without the need for biasing circuitry. It also incorporates a 50 ohm matched design on chip--removing the necessity to RF port match this device.