Our design team has extensive experience developing MMICs at frequencies from DC to 100 GHz. We have expertise in single function MMICs to complex integrated transmit/receive MMIC signal chains. Our focus is on challenging requirements which require RF/microwave engineering ingenuity and innovation. Contact us for a custom MMIC designed for your exact application requirement.
Custom MMIC has MMIC design experience across a broad range of III-V processes, including: Gallium Arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), heterojunction bipolar transistor (HBT), Gallium Nitride (GaN), and Indium Phosphide (InP). Our proprietary design library has been developed in collaboration with the world’s most respected MMIC foundries and has led to the most advanced device modeling techniques for both our standard and custom circuit solutions.
Custom MMIC was certified to ISO9001:2008 in July 2012, and re-certified in July 2015. We operate with the highest quality standards in mind from MMIC design and development to manufacturing and testing. Our facilities are audited regularly to ensure a sustained focus on quality. Custom MMIC offers military and space qualification/testing for many of our products. We have completed MIL-PRF-38534 Class K and MIL-PRF-38535 Class S screening on die, hermetic packaged die, and hybrid assemblies.
We are proud to announce a new technical brief discussing the phenomenon of high-power pulse recovery in GaN LNAs. The Gallium Nitride (GaN) high electron mobility transistor (HEMT) is well