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In this example, we consider the use of a thermal shunt over an HBT device to lower its operating temperature. Here, the device has a single emitter with an area of 3 x 15 um, and is biased at 5 Volts with a current density of 0.25 mA / um2. The shunt lands 5 um away from the emitter. We note the maximum temperature in this device is approximately 132 ºC and that the thermal shunt is carrying a significant amount of the heat to the substrate below.
With our thermal simulation capability, we can easily examine important factors such as the impact of removing the thermal shunt and changing the geometry of the HBT.
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